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| DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES * World Standard Miniature Package * Low VCE (sat) VCE(sat) = 0.15 V * Complement to 2SB1115, 2SD1115A PACKAGE DIMENSIONS in millimeters 4.5 0.1 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25 C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 Collector to Emitter Voltage VCEO 50 60 Emitter to Base Voltage VEBO 6 Collector Current (DC) IC 1 Collector Current (Pulse)* IC 2 Maximum Power Dissipation Total Power Dissipation at 25 C Ambient Temperature** PT 2.0 Maximum Temperatures Junction Temperature Tj 150 -55 to +150 Storage Temperature Range Tstg * PW 10 ms, Duty Cycle 50 % ** When mounted on ceramic substrate of 16 cm2 x 0.7 mm V V A A A W C C 1.6 0.2 4.0 0.25 1.5 0.1 0.8 MIN. E 0.42 0.06 C B 0.42 0.06 1.5 0.47 0.06 3.0 1. Emitter 2. Collector 3. Base 0.03 0.41+ 0.05 - ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product SYMBOL ICBO IEBO hFE1*** hFE2*** VCE(sat)*** VBE(sat)*** VBE*** fT 600 80 160 135 135 81 270 0.15 0.9 0.3 1.2 700 V V mV MHz 290 MIN. TYP. MAX. UNIT 100 100 100 600 400 nA nA nA 2SD1615 2SD1615A 2SC1615 2SD1615A VCE = 2.0 V, IC = 1.0 A IC = 1.0 A, IB = 50 mA IC = 1.0 A, IB = 50 mA VCE = 2.0 V, IC = 50 mA VCE = 2.0 V, IE = -100 mA TEST CONDITIONS VCB = 60 V, IE = 0 VCB = 120 V, IE = 0 VCE = 2.0 V, IC = 100 mA VEB = 6.0 V, IC = 0 Output Capacitance Cob 19 pF VCB = 10 V, IE = 0, f = 1.0 MHz *** Pulsed: PW 350 s, Duty Cycle 2 % hFE Classification MARKING hFE Document No. D10198EJ3V0DSD0 (3rd edition) (Previous No. TC-5810A) Date Published June 1995 P Printed in Japan 2SD1615 2SD1615A GM GQ 135 to 270 GL GP 200 to 400 GK 300 to 600 2.5 0.1 (c) 1985 2SD1615, 2SD1615A TYPICAL CHARACTERISTICS (TA = 25 C) SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) 5 1 pulse 2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 s m =1 PW s m 10 PT - Total Power Dissipation - W 2.0 IC - Collector Current - A W nm he d nte ou 1 0.5 20 1.5 0 m s ram ce on ic te tra bs su 1.0 0.2 0.1 DC cm 16 of 2SD1615 2SD1615A 0.5 with out h 0.05 2 .7 x0 eats ink mm 0.02 200 0.01 1 2 5 10 20 50 VCE - Collector to Emitter Voltage - V 0 40 80 120 160 TA - Ambient Temperature - C 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1.0 300 A 200 A 5.0 mA 4.5 mA 4. 0 m A 3.5 mA 3.0 mA 2.5 mA 80 0.8 IC - Collector Current - mA IC - Collector Current - A 200 A 60 2.0 mA 0.6 150 A 40 1.5 mA 0.4 1.0 mA IB = 0.5 mA 100 A IB = 50 A 20 0.2 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 VCE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V 1000 VCE = 2.0 V 500 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 t) IC = 20*IB VBE(sat) hEF - DC Current Gain 200 100 50 20 10 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 VC E( sa 5 10 IC - Collector Current - A IC - Collector Current - A 2 2SD1615, 2SD1615A GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 500 fT - Gain Bandwidth Product - MHZ 200 100 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 IC - Collector Current - A 5 10 1 Cob - Output Capacitance - pF VEC = 2.0 V 100 50 OUTPUT CAPCITANCE vs. COLLECTOR TO BASE VOLTAGE IE = 0 f = 1.0 MHZ 20 10 5 2 2 5 10 20 50 VCB - Collector to Base Voltage - V 100 SWITCHING TIME vs. COLLECTOR CURRENT 2 1 t - Switching Time - s 0.5 VCC = 10 V IC = 10.IBI = -10.IB2 VBE(off) = -2 to 3 V . PW = 2 s . Duty Cycle 2 % tstg 0.2 0.1 0.05 tf ton 0.01 0.02 0.05 0.1 0.2 IC - Collector Current - A 0.5 1 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 3 2SD1615, 2SD1615A [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 This datasheet has been download from: www..com Datasheets for electronics components. |
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